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 Data Sheet SINGLE PHASE HALL EFFECT LATCH General Description
The AH477 is an integrated Hall sensor with Hbridged output driver designed for brushless DC motor applications. The device includes an on-chip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a comparator to provide switching hysteresis for noise rejection, a bi-directional drivers for sinking and driving large current load. It also includes an internal bandgap regulator to provide temperature compensated bias for internal circuits and allows a wide operating supply voltage range. Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold BOP, the DO is turned to sink and DOB is turned to drive. This output state is held until the magnetic flux density reverses and falls below BRP, then causes DO to be turned to drive and DOB turned to sink. AH477 is available in TO-94 (SIP-4L) package.
AH477 Features
* * * * * * * * On-Chip Hall Sensor Operating Voltage: 3.5V to 18V H-Bridge Output Drivers for Single Coil Internal Bandgap Regulator for Temperature Compensation Low Output Switching Current Noise -20oC to 85oC Operating Temperature Low Profile TO-94 (SIP-4L) Package ESD Rating: 3000V (Human Body Model)
Applications
* * Single-Coil Brushless DC Motor Single-Coil Brushless DC Fan
TO-94
Figure 1. Package Type of AH477
Oct. 2009 Rev. 1. 3 1
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH Pin Configuration
Z4 Package (TO-94) GND DOB DO VCC
AH477
4 3 2 1
Figure 2. Pin Configuration of AH477 (Front View)
Pin Description
Pin Number 1 2 3 4 Pin Name VCC DO DOB GND Supply voltage Output 1 Output 2 Ground Function
Oct. 2009 Rev. 1. 3 2
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH Functional Block Diagram
VCC 1 Regulator 2 DO VCC
AH477
Hall Sensor
Amplifier
Schmitt Trigger
PreDriver
VCC 3 4 GND
DOB
Figure 3. Functional Block Diagram of AH477
Ordering Information
AH477 Circuit Type Package Z4: TO-94 (SIP-4L)
Part Number Lead Free AH477Z4-AE1 AH477Z4-BE1 Green AH477Z4-AG1 AH477Z4-BG1
E1: Lead Free G1: Green Magnetic Characteristics A: 5 to 70 Gauss B: 100 Gauss
Marking ID Lead Free AH477Z4-E1 AH477Z4-E1 Green AH477Z4-G1 AH477Z4-G1 Packing Type Bulk Bulk
Package TO-94
Temperature Range -20 to 85oC
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green package.
Oct. 2009 Rev. 1. 3 3
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH
(TA=25oC)
AH477
Absolute Maximum Ratings (Note 1)
Parameter Supply Voltage Magnetic Flux Density Continuous Output Current Hold Peak (start up) Power Dissipation Die to atmosphere Thermal Resistance Die to package case Storage Temperature ESD (Machine Model) ESD (Human Body Model) PD JA JC TSTG IO Symbol VCC B Value 20 Unlimited 250 300 600 550 227 49 -50 to 150 300 3000 Unit V Gauss mA mA mA mW
oC/W o
C/W
oC
V V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability.
Recommended Operating Conditions
(TA=25oC)
Parameter Supply Voltage Ambient Temperature Symbol VCC TA Min 3.5 -20 Max 18 85 Unit V
o
C
Oct. 2009 Rev. 1. 3 4
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter Output Saturation Voltage (Sink) Output Saturation Voltage (Drive) Supply Current Output Rise Time Output Fall Time Switch Time Differential VSAT ICC tr tf t Symbol Test Condition VCC=14V, IO=200mA VCC=14V, IO=200mA VCC=20V, Output Open RL=820, CL=20pF RL=820, CL=20pF RL=820, CL=20pF VCC1.5 Min Typ 0.25 VCC1.0 14 3.0 0.3 3.0 Max 0.8 VCC 25 10 1.5 10 Unit V V mA s s s
AH477
Magnetic Characteristics
(TA=25oC)
Parameter Operating Point Releasing Point Hysteresis Symbol BOP BRP BHYS Grade A B A B -70 -100 70 Min 5 Typ Max 70 100 -5 Unit Gauss Gauss Gauss Gauss Gauss
Test Circuit
AH477
S
Marking Side
VCC
VCC
DO DOB GND
1
2
3
4
C1 0.1F
820
N
Oct. 2009 Rev. 1. 3 5
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH Magnetic Hysteresis Characteristics AH477
14
14
12
12
10
10
DO Output (V)
DOB Output (V)
-100 -50 0 50 100
8
8
6
6
4
4
2
2
0
0 -100 -50 0 50 100
Magnetism (GS)
Magnetism (GS)
Figure 4. DO Output vs. Magnetism
Figure 5. DOB Output vs. Magnetism
Typical Performance Characteristics
16
20
14
16
12 12
ICC (mA)
10
ICC (mA)
8
8 4
6
TA=25 C
o
VCC=14V
4
0 2 4 6 8 10 12 14 16 18 20
-20
0
20
40
60
80
VCC (V)
TA ( C)
o
Figure 6. Supply Current vs. Supply Voltage
Figure 7. Supply Current vs. Ambient Temperature
Oct. 2009 Rev. 1. 3 6
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH Typical Performance Characteristics (Continued)
100 80 60 40
AH477
70 60 50 40
BOP/BRP/BHYS (GS)
BOP/BRP/BHYS (GS)
20 0 -20 -40 -60 -80 -100 4 6 8 10 12 14
30 20 10 0 -10 -20 -30 -40
BOP BRP BHYS TA=25 C
16 18 20
o
BOP BRP BHYS VCC=14V
-20
-10
0
10
20
30
40
50
60
70
80
VCC (V)
TA ( C)
o
Figure 8. BOP/BRP/BHYS vs.Supply Voltage
Figure 9. BOP/BRP/BHYS vs. Ambient Temperature
1000 900 800 700 600
1000 900 800 700
VSAT (mV)
500 400 300 200 100 0 50
VSAT-up VSAT-down TA=25 C
o
VSAT (mV)
600 500 400 300 200 100
driver sink IO=200mA
100
150
200
250
300
350
0
-20
0
20
40
60
80
IO (mA)
TA ( C)
o
Figure 10. VSAT vs. IO
Figure 11. VSAT vs. Ambient Temperature
Oct. 2009 Rev. 1. 3 7
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH Typical Performance Characteristics (Continued) AH477
800
600
PD (mW)
400
200
0 -25
0
25
50
75
100
125
150
TA ( C)
o
Figure 12. PD vs. Ambient Temperature
Typical Application
AH477
VCC DO DOB GND
1 VCC
D1
2
3
4
C1 0.1F
COIL
Figure 13. Typical Application Circuit
Oct. 2009 Rev. 1. 3 8
BCD Semiconductor Manufacturing Limited
Data Sheet SINGLE PHASE HALL EFFECT LATCH Mechanical Dimensions TO-94
45 TYP
AH477
Unit: mm(inch)
0.500(0.020) 0.700(0.028) 1.520(0.059) 1.720(0.067) 0.700(0.028) 0.900(0.035) 1.950(0.077) 2.250(0.089) 0.850(0.033) 1.150(0.045) Package Sensor Location (For Hall IC)
3.780(0.149) 4.080(0.161)
4.980(0.196) 5.280(0.208)
0.360(0.014) 0.510(0.020)
0.380(0.015) 0.550(0.022)
3.450(0. 136) 3.750(0. 148)
0.360(0.014) 0.500(0.020)
14.000(0.550) 15.300(0.602)
1.270(0.050) TYP 3.710(0.146) 3.910(0.154)
Oct. 2009 Rev. 1. 3 9
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others.
MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited
- Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788
REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE
BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806


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